Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors
A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited ch...
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2017
ISSN: 1616-301X
DOI: 10.1002/adfm.201604093